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Package Marking and Ordering Information
Part Number
FQP 7 N 8 0C
FQPF 7 N 8 0C
Top Mark
FQP7N80C
FQPF7N80C
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min .
Typ .
Max .
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 800 V, V GS = 0 V
V DS = 640 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
800
--
--
--
--
--
--
0.93
--
--
--
--
--
--
10
100
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th) Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
3.0
--
5.0
V
R DS(on)
g FS
Static Drain-Source
On-Resistance
Forward Transconductance
V GS = 10 V, I D = 3.3 A
V DS = 50 V, I D = 3.3 A
--
--
1.57
5.5
1.9
--
?
S
Dynamic Characteristics
C iss Input Capacitance
C oss Output Capacitance
C rss Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
--
--
--
1290
120
10
1680
155
13
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
t f Turn-Off Fall Time
V DD = 400 V, I D = 6.6 A,
R G = 25 ?
(Note 4)
--
--
--
--
35
100
50
60
80
210
110
130
ns
ns
ns
ns
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 640 V, I D = 6.6 A,
V GS = 10 V
(Note 4)
--
--
--
27
8.2
11
35
--
--
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current
--
--
6.6
A
I SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
26.4
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 6.6 A
V GS = 0 V, I S = 6.6 A,
dI F / dt = 100 A/ μ s
--
--
--
--
650
7.0
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive r ating : p ulse - width limited by maximum junction temperature .
2. L = 25 mH, I AS = 6.6 A, V DD = 50 V, R G = 25 ?, s tarting T J = 25°C .
3. I SD ≤ 8 A, di/dt ≤ 200 A/ μ s , V DD ≤ BV DSS, s tarting T J = 25°C .
4. Essentially independent of operating temperature.
?2003 Fairchild Semiconductor Corporation
FQP7N80C / FQPF7N80C Rev. C1
2
www.fairchildsemi.com
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